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(R)
STM2DPFS30L
TM
P - CHANNEL 30V - 0.145 - 2A MiniS0-8 STripFET MOSFET PLUS SCHOTTKY RECTIFIER
PRELIMINARY DATA MAIN PRODUCT CHARACTERISTICS MOSFET V DSS 30V SCHOTTKY IF (A V) 1A R DS(on ) <0.165 V RRM 40V ID 2A V F(M AX) 0.55V
MiniSO-8 DESCRIPTION:
This product associates the latest low voltage St ripFET TM in p-channel version to a low drop Schottk y diode. Such configuration is extremely versatile in implementing a large variety of DC-DC convert ers for printers, portable equipment, and cellular phones. New MiniSO-8 package features:
s
INTERNAL SCHEMATIC DIAGRAM
s
Half footprint area versus standard SO-8, for application where minimum circuit board space is necessary. Extremely low profile, ideal for low thickness equipment.
MOSFET ABSOLUTE MAXIMUM RATINGS
Symbol VDS V DGR V GS ID ID IDM(*) P t ot Parameter Drain-source Voltage (VGS = 0) Drain- gate Voltage (RGS = 20 k) Gate-source Voltage Drain Current (continuous) at Tc = 25 C Drain Current (continuous) at Tc = 100 oC Drain Current (pulsed) Total Dissipation at Tc = 25 C
o o
Valu e 30 30 20 2 1.3 8 1.25
Unit V V V A A A W
SCHOTTKY ABSOLUTE MAXIMUM RATINGS
Symb ol V RRM I F(RMS) I F (AV) I FSM dv/dt Parameter Repetitive Peak Reverse Voltage RMS Forward Current Average F orward Current Surge Non Repetitive Forward Current Critical Rate Of Rise Of Reverse Voltage T a=60 C =0.5 tp= 10 ms Sinusoidal
o
Valu e 40 2 1.2 5.5 10000
Un it V A A A V/s
(*) Pulse width limited by safe operating area Note: For the P-CHANNEL MOSFET actual polarity of voltages and current has to be reversed
July 1999
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THERMAL DATA
R thj -amb T s tg Tj (*) Thermal Resistance Junction-ambient MOSFET Storage Temperature Range Maximum Junction Temperature
2
100 -65 to 150 150
o
C/W o C o C
(*) Mounted on a 1 in pad of 2oz Cu in FR-4 board
MOSFET ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF
Symbo l V (BR)DSS I DSS IGSS Parameter Drain-source Breakdown Voltage Test Con ditions I D = 250 A V GS = 0 Min. 30 1 10 100 Typ. Max. Unit V A A nA
Zero Gate Voltage V DS = Max Rating Drain Current (V GS = 0) V DS = Max Rating Gate-body Leakage V GS = 20 V Current (VDS = 0)
T c = 125 oC
ON ()
Symbo l V GS(th) R DS(on) I D(o n) Parameter Gate Threshold Voltage V DS = V GS Static Drain-source On V GS = 10V Resistance V GS = 4.5V On State Drain Current Test Con ditions ID = 250 A ID = 1 A ID = 1 A 2 Min. 1 Typ. 1.7 0.145 0.18 Max. 2.5 0.165 0.2 Unit V A
V DS > ID(o n) x R DS(on )ma x V GS = 10 V
DYNAMIC
Symbo l g f s () C iss C os s C rss Parameter Forward Transconductance Test Con ditions V DS > ID(o n) x R DS(on )ma x f = 1 MHz I D =1 A V GS = 0 Min. Typ. 2 510 170 55 660 220 72 Max. Unit S pF pF pF
Input Capacitance V DS = 25 V Output Capacitance Reverse T ransfer Capacitance
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STM2DPFS30L
ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON
Symbo l t d(on) tr Qg Q gs Q gd Parameter Turn-on Delay T ime Rise Time Total G ate Charge Gate-Source Charge Gate-Drain Charge Test Con ditions V DD = 15 V I D = 1.5 A R G = 4.7 V GS = 4.5 V (Resistive Load, see fig. 1) V DD = 24 V ID = 3 A V GS = 5 V Min. Typ. 14.5 37 5.5 1.7 1.8 Max. 19 48 Unit ns ns nC nC nC
SWITCHING OFF
Symbo l t d(of f) tf Parameter Turn-off Delay T ime Fall T ime Test Con ditions V DD = 15 V ID = 1.5 A V GS = 4.5 V R G = 4.7 (Resistive Load, see fig. 1) Min. Typ. 88 23 Max. Unit ns ns
SOURCE DRAIN DIODE
Symbo l ISD I SDM (*) V SD () t rr Q rr I RRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Time Reverse Charge Reverse Current I SD = 2 A V GS = 0 di/dt = 100 A/s T j = 150 o C tbd Recovery I SD = 2 A V DD = 15V Recovery Recovery Test Con ditions Min. Typ. Max. 2 8 1.2 Unit A A V ns nC
() Pulsed: Pulse duration = 300 s, duty cycle 1.5 % (*) Pulse width limited by safe operating area
SCHOTTKY STATIC ELETTRICAL CHARACTERISTICS
Symbo l I R () V F() Parameter Reversed Current
o
Test Con ditions V R =40V V R=40V I F =1A I F =1A I F =2A I F =2A
Min.
Typ. 1.5 0.45
Max. 40 5 0.55 0.51 0.7 0.7
Unit A mA V V V V
Leakage T J= 25 C T J= 100 oC T J= T J= T J= T J= 25 oC o 100 C o 25 C 100 oC
Forward Voltage drop
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Fig. 1: Switching Times Test Circuits For Resistive Load Fig. 2: Gate Charge test Circuit
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MiniSO-8 MECHANICAL DATA
DIM. A A1 A2 D D2 E E1 E2 E3 E4 R R1 t1 t2 1 2 L L1 e S mm TYP. 1.10 0.10 0.86 3.00 2.95 4.90 3.00 2.95 0.51 0.51 0.15 0.15 0.31 0.41 3.0 12.0 0.55 0.95 0.65 0.525 inch TYP.
MIN.
MAX.
MIN.
MAX.
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Information furnished is believed to be accurate and reliable. However, STMicroelect onics assumes no responsibil ity for the consequences r of use of such information nor for any infringement of patents or other rights of third partes which may result from its use. No license is i granted by implication or otherwise under any patent or patent rights of STMicroelectro nics. Specific ation mentioned in this publication are subjec t to change without notice. This publication supersedes and replaces all informaton previously supplied. STMicroelectronics products i are not authorized for use as critical components in life support devices or systems with express written approval of STMicroelectronics. out The ST logo is a trademark of STMicroelectronics (c) 1999 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japa - Malaysia - Malta - Morocco n Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A.
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